Temperature Humidity Bias Test (High voltage migration test)
Supports maximum load voltage 3 kV
The high voltage migration test evaluates durability of a power device in high temperature and high humidity.
It detects failure phenomenon such as TDDB (Time-Dependent Dielectric Breakdown) of insulating film and electrolytic corrosion of metal film by measuring the increase of insulation leakage current and gate leakage current, breakdown of gate insulation film and measuring ion migration.
Specification:
Temperature range: From Normal temperature to 300℃
Humidity range: From Normal humidity to 98%RH
Maximum applied voltage: 3kV
Maximum current measurement range: 3.2mA
Resolution: 10nA
Number of measurable channels: 8ch
Insulation resistance value can be monitored constantly.
It detects failure phenomenon such as TDDB (Time-Dependent Dielectric Breakdown) of insulating film and electrolytic corrosion of metal film by measuring the increase of insulation leakage current and gate leakage current, breakdown of gate insulation film and measuring ion migration.
Specification:
Temperature range: From Normal temperature to 300℃
Humidity range: From Normal humidity to 98%RH
Maximum applied voltage: 3kV
Maximum current measurement range: 3.2mA
Resolution: 10nA
Number of measurable channels: 8ch
Insulation resistance value can be monitored constantly.
Contact information
PIC: Tomoki Sumida (Mr.)
TEL:+81-3-3727-7111
Standards
| Test | Standard number | Standard | Target object |
|---|---|---|---|
| High temperature and high
humidity bias test (High voltage migration test) |
JEITA ED4701/100A | Environmental and endurance test methods for semiconductor devices (Life test I) | Power semiconductor devices |
| JEITA ED4701/200A | Environmental and endurance test methods for semiconductor devices (Life test II) | Power semiconductor devices | |
| JEITA ED4704A | Reliability test method for wafer process of LSI semiconductor device | MOSFET |